Yale University Develops Next Generation DRAM

Submitted by lalit on August 16, 2009 - 3:21pm.

With increase in performance of CPU and graphics chip, storage and memory are becoming the bottleneck of computers today. To increase performance of memory (DRAM) Yale University and Semiconductor Research Corporation have developed a new DRAM cell using ferroelectric layers.

Researchers at the university have found a way to apply ferroelectric material to a DRAM cell, which eliminates the need for a storage capacitor found in conventional DRAM. Ferroelectric DRAM (FeDRAM) is a capacitor-less DRAM cell, with a cell structure very similar to a CMOS transistor, except that the gate dielectric is ferroelectric.

Compared to the conventional DRAM cell, FeDRAM offers simpler cell structure, improved scalability, smaller cell size, order of magnitude longer retention time, lower power consumption and the possibility of storing multi-bits per cell. As FeDRAM will be able to use existing fabrication facilities and equipment, industrial transition to FeDRAM will be much cheaper and easier. Researchers believe that FeDRAM will be ready to transfer to the industry for production in the foreseeable future (at least 5 years).
[Via SRC]