Samsung Starts Production of 40nm 4Gb DDR3 Memory Chip

Submitted by lalit on February 24, 2010 - 7:55am.

Samsung has started mass production of 4Gb DDR3 memory chip based on new 40nm process technology. The new chip would allow production of 16GB memory modules for desktop, 32GB modules for servers and 8GB modules for notebooks, effectively doubling the memory density previously achieved by 2Gb components.

The new 4Gb chip would not only bring higher capacities but also will be 83 percent more power efficient than 1Gb DDR2 module made with 60nm technology and 35 percent more power efficient than 40nm 2Gb components. The power requirement for 40nm 4Gb DDR3 chips is only 36W, where as the 60nm modules require 210W and 40nm 2Gb modules require 55W.

Memory modules made with new 4Gb DDR3 memory will support both 1.5V and 1.35V specifications and will be available in 8GB SODIMM configuration for notebooks, 16GB capacity for desktop and 32GB RDIMM configuration for servers starting this month.
[Via DigiTimes]