DDR3 Memory to Become Cheaper and Faster in 2009

Submitted by lalit on January 21, 2009 - 8:59am.

One of the biggest factors hindering adoption of the new DDR3 memory is its price. A 1GB DDR3 memory module can cost up to four times more than a 1GB DDR2 memory module. However, memory chipmakers like Samsung and Elpida what’s to change that by using 50nm-manufacturing technology. The 50nm process will increase densities and speeds of the chip while lowering latencies, power consumption and costs.
Elpida’s new 50nm process uses 193nm argon fluoride immersion lithography combined with copper interconnect in place of standard aluminum interconnect to give 25 percent speed boost. The chips are also smaller at 40mm2 meaning that more chips can be made on a single wafer lowering the cost of production. Samsung has also started using their new 50nm process and claims a 60 percent increase in productivity over their DDR2 equivalents. Another memory chipmaker Qimonda has developed their own 46nm process that they will start using in mid 2009.
The upcoming DDR3 chips made using 50nm process will be capable of 2.5Gb/s memory bandwidth at standard 1.5v and 1.6Gb/s memory bandwidth at 1.2v, making them not only smaller, but also way faster than present DDR2 memory modules. RAM module makers like Corsair will start shipping memory modules using the 50nm DDR3 chips in February.
With increase in demand for DDR3 memory and decrease in production cost of the chip, the price premium for DDR3 memory could drop from more than 100 percent to around 10 percent by end of 2009.
[Via Daily Tech]