Toshiba to Ship 43nm Based SLC NAND Flash in 2009

Submitted by lalit on October 28, 2008 - 10:12am.

Toshiba has announced that it will ship 43nm manufacturing technology based NAND flash memory chips in 2009. The new chips will be available in 2GB, 4GB and 8GB capacities. Toshiba said that moving from 56nm process technology to 43nm process technology results in doubling the chip density, which allows them to manufacture smaller SLC NAND Flash chips that are 2.5 times faster than MLC Flash memory.
Toshiba will aim the new chips towards devices that require fast embedded memory like mobile phones, flat panel HDTVs, servers and portable media players. The smaller size of the new chip will allow device manufacturers to offer higher capacities on their portable devices. Toshiba will start sampling the new chip in early 2009 and mass production will start in first quarter of 2009.
[Via Electronista]