Samsung announced few new chips aimed at smartphone market including first low power DDR3 RAM, Exynos 4212 ARM processor, 64GB embedded NAND chip, 16-megapixel CMOS camera sensor and 1.2-megapixel webcam. Samsung says the new 4gb (512MB) low power DDR3 chip is first of its kind and is built using 30nm process technology. It is 60% faster at 1.6Gbps data transfer rate while consuming 20% less power than LPDDR2 RAM. Samsung will start sampling the new LPDDR3 RAM in fall with devices based on the new chip coming to market in first half of 2012. Samsung plans to ship 2GB version on the chip in 2012.

The new 1.5GHz dual-core Exynos 4212 processor is just a speed bump to the current 1.2GHz chip. Samsung says the chip also has a new graphics core that should increase the 3D performance by 50% over previous generation chip. Samsung will ship Galaxy S II LTE phone in Canada and Galaxy S II HD LTE in South Korea based on the new Exynos processor this fall.

Samsung made the new 64GB embedded NAND flash memory chip using 20nm process technology. The chip combines toggle DDR2 memory and more efficient NAND flash for faster read/write speed of 80MB and 40MB per second respectively. Overall the new 64GB NAND chip increases the performance and power efficiency by 60%. Samsung will start sampling the chip by end of this year.

On the smartphone camera sensor side, Samsung announced SK52P1 – a 16-megapixel CMOS sensor for high-end smartphones. The camera uses new 1.34-micrometer backside illuminated pixels to capture images even in low light. It can record full HD video at 30fps or 60fps and can shoot up to 30 images per second in continuous shooting mode. The second sensor SK58AA is aimed at front facing camera on smartphone for video calls and it uses 1.4-micrometer pixels. The 2.8mm thin camera can shoot 1.2-megpaixel images or 720p video at 30fps. Samsung is sampling both the cameras now and will start full scale production in November.